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QPHY-LPDDR2-OM-G Rev B

Write Bursts

tDQSS, DQS latching rising transitions to associated CK edge

CK rising edge at VREF level to DQS rising edge at VREF level, see Figure.

Figure 26. Burst write operation: WL=1 BL=4 [JESD209-2D figure 41]

tDQSH, DQS Input High Pulse Width

DQS High pulse width at VREF level, see Figure 26.

Figure 26. Data input (write) timing [JESD209-2D figure 40]

tDQSL, DQS Input Low Pulse Width

DQS Low pulse width at VREF level, see Figure 26.

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Teledyne-lecroy QPHY-LPDDR2 Manuale Utente Pagina 46